掺杂衬度,dopant contrast
1)dopant contrast掺杂衬度
1.Secondary electrondopant contrast in semiconductors;半导体二次电子像中的掺杂衬度
2.Possible mechanisms of thedopant contrast are discussed, with a detailed description of two main mechanisms, band bending at the semic.文中还探讨了半导体掺杂衬度的可能的机理 ,详细介绍了两种主要机理 :表面能带弯曲和样品外局域电场的出
2)substrate doping concentration衬底掺杂浓度
3)lightly doped substrate轻掺杂衬底
4)doping concentration掺杂浓度
1.Measurement ofdoping concentration in strained Si_(1-x) Ge_x with four-probe array;四探针法测量应变Si_(1-x)Ge_x掺杂浓度
2.The electroluminescence spectra of devices with differentdoping concentration are detected under different driving current densities.分别以PtOEP掺杂和未掺杂的Alq3膜作为发光层制作有机发光器件(OLED),改变掺杂浓度,检测器件电致发光(EL)光谱的变化。
3.Based on rate equations,changingdoping concentration and cladding size of the Er3+/Yb3+ co-doped double-cladding fiber laser,the effect of thedoping concentration and cladding sizeon the performance of the Er3+/Yb3+ co-doped double-cladding fiber laser was studied.为了研究掺杂浓度、包层尺寸对双包层Er3+/Yb3+共掺光纤激光器的影响,根据双包层Er3+/Yb3+共掺光纤激光器产生激光的机理,基于速率方程,采用改变Er3+,Yb3+掺杂浓度、内包层尺寸等光纤参数的方法,得到了双包层Er3+/Yb3+共掺光纤激光器随光纤参数变化的特征结果。
英文短句/例句
1.With increasing doping concentration, the impact of neutral impurity scattering becomes more significant.随着掺杂浓度的增加,中性杂质散射作用增强.
2.Photoluminescence of CdS/SiO_2 Core-Shell Nanostructures with Different Manganese Concentration不同掺杂浓度的CdS:Mn/SiO_2核壳纳米结构的光致发光
3.Spectral of Yb:YAB Single Crystal with Different Yb~(3+) Concentration不同掺杂浓度Yb~(3+):YAl_3(BO_3)_4晶体光谱研究
4.Photoluminescence Spectra of CdSe/ZnS-Quantum Dot Doped Fiber with High Doping Concentrations较高掺杂浓度下CdSe/ZnS量子点光纤光致荧光光谱
5.Influence of Mn Ion Doping Concentration on Electronic Structure and Optical Properties of Mn:MgAl_2O_4Mn掺杂浓度对Mn:MgAl_2O_4电子结构和光学性质的影响
6.Influence of Doping Concentration on ZnS:Cu Optical Thin Films Prepared by Electrodeposition掺杂浓度对电沉积法制备ZnS:Cu光学薄膜影响
7.Novel Method for Calculating Base Doping Concentration of Field Stop IGBT场终止型IGBT基区掺杂浓度计算的新方法
8.A Study on Preparation and Properties of Highly Doped Mn: MgAl_2O_4 Transparent Ceramics;高掺杂浓度的掺锰铝酸镁透明陶瓷的制备及其物性研究
9.Influence of Doping Concentration on Gauge Factor and Linearity of Polysilicon Nanofilms掺杂浓度对多晶硅纳米薄膜应变系数及其线性度的影响
10.Effects of Doping Concentration and Hole Blocking Material on the Performance of Phosphorescent OLEDs磷光OLED中掺杂浓度及空穴阻挡材料对器件发光性能的影响
11.Effect of doped Ce~(3+) concentration on luminescent properties of Al_2O_3:Ce~(3+) films deposited by medium-frequency reaction magnetron sputtering掺杂浓度对中频反应磁控溅射制备Al_2O_3:Ce~(3+)薄膜发光性能的影响
12.Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped siliconGB/T13389-1992掺硼掺磷硅单晶电阻率与掺杂剂浓度换算规程
13.On Effect of Acetic Acid on Calcium and Manganese Doping Ba_xSr_(1-x)TiO_3;醋酸浓度对钙锰掺杂Ba_xSr_(1-x)TiO_3的影响研究
14.Effects of boron doping on carrier concentration of diamond film硼掺杂对金刚石薄膜载流子浓度的影响
15.Investigation on Microstructure and Electrical Properties of Sm_2O_3-doped Bismuth Titanate Ceramics高浓度Sm_2O_3掺杂的BIT陶瓷微结构与电性能研究
16.Concentration dependence of luminescence of Tb~(3+)-doped silicate glassesTb~(3+)掺杂硅酸盐玻璃发光性能的浓度依赖关系
17.Emission of BaMgAl_(10)O_(17):Eu~(2+) with High Concentration of Activator高浓度激活剂掺杂钡镁铝酸盐的发光特性研究
18.Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption methodGB/T17170-1997非掺杂半绝缘砷化镓单晶深能级EL2浓度红外吸收测试方法
相关短句/例句
substrate doping concentration衬底掺杂浓度
3)lightly doped substrate轻掺杂衬底
4)doping concentration掺杂浓度
1.Measurement ofdoping concentration in strained Si_(1-x) Ge_x with four-probe array;四探针法测量应变Si_(1-x)Ge_x掺杂浓度
2.The electroluminescence spectra of devices with differentdoping concentration are detected under different driving current densities.分别以PtOEP掺杂和未掺杂的Alq3膜作为发光层制作有机发光器件(OLED),改变掺杂浓度,检测器件电致发光(EL)光谱的变化。
3.Based on rate equations,changingdoping concentration and cladding size of the Er3+/Yb3+ co-doped double-cladding fiber laser,the effect of thedoping concentration and cladding sizeon the performance of the Er3+/Yb3+ co-doped double-cladding fiber laser was studied.为了研究掺杂浓度、包层尺寸对双包层Er3+/Yb3+共掺光纤激光器的影响,根据双包层Er3+/Yb3+共掺光纤激光器产生激光的机理,基于速率方程,采用改变Er3+,Yb3+掺杂浓度、内包层尺寸等光纤参数的方法,得到了双包层Er3+/Yb3+共掺光纤激光器随光纤参数变化的特征结果。
5)Doped concentration掺杂浓度
1.53 μm photoluminescence intensity,doped concentration,and pump power were numerically simulated for Yb-Er co-doped .考虑两级合作上转换、激发态吸收和交叉弛豫等非线性效应,建立了镱铒共掺氧化铝材料体系的八个能级的速率方程,唯象地构造了合作上转换、激发态吸收、交叉弛豫等系数随镱铒掺杂浓度的变化函数,数值模拟了Yb∶Er∶Al2O3材料1。
2.By taking account of the loss of cavity as a function of the Nd 3+ doped concentration, a new expressions of the laser output power and the slope efficiency as a function of the doped concentration are obtained, which are coincident with the experimental results quite well.通过对 Nd:YVO4晶体吸收特性的研究 ,对全固态 Nd:YVO4激光器中晶体的 Nd3 + 掺杂浓度在强光抽运条件下对激光输出特性的影响进行了分析 ,得出了激光器的输出功率和斜效率与晶体掺杂浓度的对应关系。
3.% doped concentration,and a output coupler with radius of 30mm,were chosen in this experiment,and 456nm laser threshold was realized at 0.实验中采用标称输出功率为3W的LD,端面抽运掺杂浓度为0。
6)doping density掺杂浓度
1.By using MATLAB software, the authors carry out simulation computation and optimization; and study in a deep-going way the effect of the change ofdoping density and external bias voltage on frequency and amplitude of self-sustained oscillation of doped GaAs/AlAs superlattice with weak coupling.运用MATLAB软件进行模拟计算和优化,深入研究掺杂浓度和外加偏压的变化,对GaAs/AlAs掺杂弱耦合超晶格自维持振荡频率和振幅的影响。
2.The research results indicate that with the increase ofdoping density in channel,the hot carrier effect immunity becomes better.基于流体动力学能量输运模型 ,利用二维仿真软件 Medici研究了深亚微米槽栅 PMOS器件衬底和沟道掺杂浓度对器件抗热载流子特性的影响 ,并从器件内部物理机理上对研究结果进行了解释。
3.The method to deal withdoping density for t he simulation of semiconductor devices was discussed.讨论了半导体器件模拟计算中的掺杂浓度处理方法，比较了Ｆｏｒｔｒａｎ与Ｍａｔｌａｂ两种计算，指出利用Ｍａｔｌａｂ可以避免复杂繁琐的编程，而且调整极为方便。
延伸阅读
衬经衬纬圆纬机用以编织衬经衬纬针织物的圆型纬编针织机。它在编织平针组织的同时,衬入不参加成圈的经纱和纬纱,形成衬经衬纬针织物。其基本组织结构如图1所示。 这种针织物的纵向和横向的延伸度都较小，具有机织物的特性，除适合做各种外衣外，还可作灌溉用涂塑管道的骨架。在衬经衬纬圆纬机上，有三组纱线：衬经纱、衬纬纱、成圈纱参加编织。其编织机构如图2所示。 机器的针筒固定在台面上，三角座相对于针筒回转。衬经纱从固定的纱架上引出，通过分经盘（或导经片）由上而下经过针间衬入织物线圈纵行间。所有衬经纱从针筒口向外倾斜一定角度，形成圆锥面，便于成圈纱的喂入。衬纬纱筒子架位于衬经纱外侧，与三角座一起回转，通过导纬器将纬纱衬入针背与经纱之间，依次横向搁在针上的旧线圈上方。成圈纱筒子架位于衬经纱内侧，与三角座同步回转。导纱器处于织针与衬经纱之间，把成圈纱喂入针钩内编织成圈，形成平针组织，同时，使其线圈的沉降弧从内侧包住衬经纱，圈柱从外侧包住衬纬纱，从而使三组纱线结合在一起，形成一种基本的衬经衬纬针织物。衬经衬纬针织物用于外衣产品时，由于衬经纱和衬纬纱之间没有交织点，易于拱出，因此，需改变其组织结构。例如，通过导经片将衬经纱在针头上绕一圈，并把它向下转移到旧线圈处,再和旧线圈一起向上套圈,使衬经纱与成圈纱结合得更紧密。另外，适当加粗衬纬纱，也可提高衬经衬纬针织物的结构稳定性。
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