宽禁带,Wide band gap
1)Wide band gap宽禁带
英文短句/例句
1.Design of a GaN HEMT Class F Power Amplifier宽禁带GaN HEMT F类功率放大器设计
2.Studies of Impurities in a Wide Band Semiconductor SiC宽禁带SiC材料中杂质的分析研究
3.Preparation and Doping of Wide Band Gap Cubic Boron Nitride Films;宽禁带立方氮化硼薄膜的制备与掺杂研究
4.Characterization for the Structures and Properties of Wide Bandgap Semiconductor In_2O_3 by First-principle Calculations宽禁带半导体In_2O_3结构和性能的第一性原理研究
5.Development of Solar-blind Ultraviolet Detectors Based on Wide Bandgap Semiconductors宽禁带半导体日盲紫外探测器研究进展
6.Recent Development and Future Perspective of Silicon Carbide Power Devices--Opportunity and Challenge宽禁带半导体SiC功率器件发展现状及展望
7.Fabrication of Wide-band Semiconductor Nanostructures and Study of Its Field Emission Application;宽禁带半导体纳米结构制备及其场发射应用研究
8.Study of ZnO & GaN Wide Band-gap Semiconductors: Microstructure Modulation and Property Characterization宽禁带半导体ZnO、GaN及其相关材料的微结构调控与性能研究
9.Widening of PBG in 1D Photonic Crystal and Design of Filter;一维光子晶体禁带扩宽及滤波器设计
10.The first order forbidden energy?band width is the biggest when cylindrical radius is about 40 ?.圆柱半径在40 左右时,第一禁带宽度最大。
11.1. For a certain apodization function, the band width, steepness of the band1. 对于同一切趾函数，光栅反射谱的禁带宽度、禁带边缘陡峭性和旁瓣
12.Silicon and germanium, for instance, have forbidden bands whose widths are 1.1 and 0.65eV, respectively.例如，硅和锗的禁带宽度分别为1．1电子伏和0．65电子伏。
13.Study of Transparent Conducting CdO Thin Films with a Tunable Band-gap Deposited on Organic Substrates;有机衬底上沉积禁带宽度可调的CdO透明导电薄膜
14.Study of Band Gap Broadening Method and Waveguide Transmission Property of Photonic Crystal Formed by Holographic Lithography全息光子晶体禁带展宽方法和波导传输特性的研究
15.Taiwan eases mainland bans.台湾放宽对大陆的禁令。
16.The films made at different aging time with same dip times have the same direct transition bandgaps.在不同陈化时间,浸渍相同次数制得的膜具有相同的直接跃迁禁带宽。
17.The methods of bandwidth increasment and the problems of one-dimensional photonic crystal omnidirectionsl reflector are discussed.讨 论了增加禁带宽度的方法及一维光子晶体全角度反射镜中存在的问题。
18.Results indicate that the optical band gap of the CN x films is decreased with the increasing nitrogen concentration, accompanied with the reflectance increase of the films.结果表明：随着薄膜中氮含量的增加，碳氮薄膜的光学禁带宽度减小，红外反射率增加。
相关短句/例句
The direct-band-gap energy禁带带宽
3)band gap禁带宽度
1.Measuring theband gap of silicon using silicon photocells;利用硅光电池测量硅单晶半导体材料的禁带宽度
2.It also showed that the optical absorption edge of the annealed film appeared shifted towards the longer wavelength side and theband gap decreased by 0.光学性质显示退火处理的薄膜吸收边缘明显的向长波的方向移动,发生红移现象,而且禁带宽度减少了0。
3.Based on the simulation, the bestband gap and the optimal thickness of each junction were carried out.本文对a Si∶H叠层薄膜太阳电池进行了计算机模拟,提出各层电池的禁带宽度最佳匹配以及各层电池本征层的最佳厚度的设计方案。
4)bandgap["b?ndɡ?p]禁带宽
1.A thick film has a red shift of direct transitionbandgap than thin films due to the strong interface interaction.由于厚膜中存在较强的表面相互作用,厚膜的直接跃迁禁带宽与薄膜相比发生了红移。
2.The thickness and thebandgap of TiO_2 nano films were calculated by using the UV-VIS spectra of the films.采用反胶束法制备TiO2纳米溶胶,利用浸渍提拉方法制备TiO2薄膜,通过对膜进行紫外可见光谱分析,探讨了影响TiO2纳米膜厚度和禁带宽的各种因素。
3.The thickness and thebandgap of TiO2 nano films were calculated by using the UV-VIS spectra of the films.通过对膜进行紫外可见光谱分析,探讨了影响TiO2纳米膜厚度和禁带宽度的各种因素。
5)Bandgap["b?ndɡ?p]禁带宽度
1.Relationship Between Intrinsic Breakdown Field andBandgap of Materials;本征击穿电场与禁带宽度的关系
2.Determined the bandgap of ncSi using a heterojunction CV;电容-电压法测定纳米硅的禁带宽度
3.Determination of bandgap in SiGe strained layers using a pn heterojunction C-V;pn结电容-电压法测量应变SiGe禁带宽度
6)band-gap禁带宽度
1.Theband-gaps of BN(n,0) nanotubes also increase with the increase of n and converge at 5.BN(n ,0 )纳米管的禁带宽度随着n的增大而增大 ,并收敛于 5 。
2.The transmission spectra of ZnS films were measured,optical constants andband-gap of ZnS films were obtained.利用薄膜分析系统测量不同沉积时间制备的ZnS薄膜透射谱,通过分析薄膜透射谱,来确定ZnS薄膜光学常数和禁带宽度。
延伸阅读
宽V带分子式：CAS号：性质：又称变速V带。相对高度(带厚对带宽之比)为，0.3。按其顶面和底面带齿或不带齿，可分为无齿宽V带、内齿形宽V带、内外齿宽V带和截锥形宽V带四种。通常应用于带式无级变速器的动力传动。由于其具有结构简单、制造容易、传动平稳、能吸收振动、维修方便、制造成本低等优点而得到广泛应用和迅速发展。
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